作者聲明

2011年第3期《電子與封裝》雜志中《超薄氧化層制備及其可靠性研究》一文，摘要中“氧化層最大擊穿電壓值49.1V”有誤，現(xiàn)更正為“最大擊穿電壓為8.0V。”

正確的摘要內(nèi)容如下：“通過(guò)實(shí)驗(yàn)優(yōu)化，在800℃、O2/DCE、N2退火條件下，可以制備50A氧化層，其可靠性能為：最大擊穿電壓8.0V，平均擊穿電壓7.1V，擊穿電場(chǎng)16.62 mV.cm-1，早期失效率3.85%，擊穿電荷量QBD>15C.cm-2點(diǎn)可達(dá)61.54%?！庇⑽恼骸癐n the process of N/O Dry oxidation, N2anneal can effectively improve the densify and QBD of ultra thin oxide. The 50A oxide with excellent reliability, which including maximize breakdown voltage 8.0V,averagen breakdown voltage 7.1V, breakdown electric field 16.62 mV.cm-1, the ratio of initial-invalidation 3.85%,and 61.54% points with QBD>15C.cm-2,was successfully prepared.”