• <tr id="yyy80"></tr>
  • <sup id="yyy80"></sup>
  • <tfoot id="yyy80"><noscript id="yyy80"></noscript></tfoot>
  • 99热精品在线国产_美女午夜性视频免费_国产精品国产高清国产av_av欧美777_自拍偷自拍亚洲精品老妇_亚洲熟女精品中文字幕_www日本黄色视频网_国产精品野战在线观看 ?

    Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect?

    2021-05-06 08:55:30BinWang王斌XinLongShi史鑫龍YunFengZhang張云峰YiChen陳伊HuiYongHu胡輝勇andLiMingWang王利明
    Chinese Physics B 2021年4期
    關(guān)鍵詞:王斌

    Bin Wang(王斌), Xin-Long Shi(史鑫龍), Yun-Feng Zhang(張云峰),Yi Chen(陳伊),2, Hui-Yong Hu(胡輝勇), and Li-Ming Wang(王利明)

    1State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071,China

    2Mailbox 150,BaoJi 721000,China

    Keywords: junctionless field-effect transistor(FET),gate-induced drain leakage(GIDL),step-gate-oxide,offstate current

    1. Introduction

    Scaled down into nanometers,conventional Si MOSFETs are facing the problems of forming ultra-steep doping profile in p–n junctions,[1–4]and field-effect transistors(FETs)without junctions,i.e.,junctionless FETs(JLFETs)were proposed to eliminate the stringent requirement.[5–10]Unlike “regular”p–n junction-based FET,the JLFET usually has the same uniform doping concentration in the source, channel and drain region. The metal with large work function is introduced as gate electrode to deplete the entire channel region at zero biased gate voltage (VGS=0 V).[11–13]In the on-state, the depletion region under the gate dies away and the entire channel region becomes neutral, allowing carriers to flow from drain to source. Therefore, the JLFET is working in the flatband mode or accumulation mode,which is very different from the inversion mode-mechanism of MOSFET. Due to these reasons, the JLFET fetures simplified fabrication process, large on-state current Ion,excellent drive capability and is a promising candidate as crucial components for the future electronics industry.

    However, to ensure the full depletion of the channel by gate at zero bias, the gate electrode with large work function(such as 5.1 eV for n-JLFET, 4.3 eV for p-JLFET, etc.) and the channel with thin thickness is preferred. Thus, a serious gate-induced drain leakage(GIDL)effect is caused due to the considerable lateral band-to-band tunneling (L-BTBT)[14,15]at channel–drain surface in the off-state, thus increasing the off-state current Iofffinally.[16–18]

    To suppress the GIDL effect in JLFET, several efforts have been made to reduce the tunneling probability T(E) of L-BTBT,such as JLFET with hole sink layer(HS JLFET),[19]JLFET with hetero-dielectric buried oxide(HDB JLFET),[20]JLFET with hetero-gate dielectric (HGD JLFET),[21]JLFET with dual material gate(DMG JLFET),[14]JLFET with coreshell architecture (CS JLFET),[22]JLFET with tunnel dielectric(TD JLFET),[23]etc.However,these devices usually cause other issues,hindering their applications. The HS JLFET consisting of a doped p–n junction suffers the creation of such an abrupt junction and its on-state current is low(~3.3 times)as compared with the SOI JLFET’s.In the HDB JLFET,the interface between the high-k dielectric and SiO2in the buried oxide(BOX)region must be appropriately aligned with the channel–drain interface,which requires a stringent control of the wafer fabrication process. The HGD JLFET encountered the same issues, fabricating the hetero-gate dielectric and alignment of the hetero-dielectric interface in the middle of the channel region are the major issues concerning the HGD JLFETs. The DMG JLFET is also facing the fabrication problem, since achieving distinct gate materials within a span of 20 nm itself is a technological challenge. The CS JLFET also needs to create an abrupt junction at the core–shell interface through using the industry standard ion implantation process which is not feasible and has the same technological challenges faced while fabricating nanowires. Due to the defects and traps introduced by TD in the center of the channel, the TD JLFET faces the problems of dielectric semiconductor interface which should be further suppressed. To solve the issues above,we have proposed two types of JLFET based on fully depleted SOI (FDSOI) substrate with field plate (FP) structure[24]and lightly doped drain(LDD)structure,[25]respectively,to suppress the GIDL effect, but the FP structure needs additionally another type of metal to enhance the performance of the device, and LDD structure causes the on-state resistance to increase,thus reducing the on-state current of the device.

    In this paper, a novel n-type JLFET based on FD-SOI with a step-gate-oxide (SGO) structure is proposed to suppress the GIDL effect and Ioff. With the help of step-gateoxide,the tunneling width in the region where drain and channel are overlapped is enlarged and the tunneling probability is reduced, which leads the GIDL current to be suppressed significantly. The Sentaurus simulation results indicate that the Ioffof the SGO-JLFET decreases significantly with little impaction on its on-state current Ionand threshold voltage VTH.So its Ion/Ioffratio is enhanced by 37 times compared with that of the normal JLFET, and subthreshold swing (SS) increases to 84 mV/dec. Meanwhile, the thicker tunnel-gateoxide can weaken the influence on the total gate capacitance of JLFET,which can alleviate the capacitive load of the transistor in the circuit applications. The influences of the structure of step-gate-oxide,such as TToxide(thickness of the tunnel oxide), LToxide(length of the tunnel oxide), LCoxide(length of the control oxide)are discussed in detail,which could provide useful instruction for the device design.

    2. Device structure and simulation parameters

    Figure 1 shows the cross-section of the normal JLFET and step-gate-oxide JLFET(SGO JLFET),respectively. Comparing with the normal JLFET,the gate oxide in the SGO JLFET is composed of two parts: control oxide and tunnel oxide.Just as in the normal JLFET, The control oxide near source region in the novel JLFET is used to shut down the device when VGS=0 V,and the tunnel oxide near drain region is used to reduce the tunneling probability T(E)of L-BTBT between channel and drain. When VGSis increasing, the depletion region under tunnel oxide vanishes first, and then the depletion region under control oxide vanishes,turning the device on.

    The simulation device parameters are listed in Table 1.Simulations are carried out by using the Sentaurus TCAD.In the simulations, the length and thickness of the tunnel oxide are chosen to be 10 nm and 6 nm,respectively,and the thickness of control oxide and channel are 3 nm and 7 nm,respectively. The channel of the normal JLFET and novel JLFET are uniformly doped (1×1019cm?3) and the metal of gate electrode is Au to ensure that the channel is fully depleted in offstate. High-k material of HfO2 is used as gate dielectric for both control oxide and tunnel oxide.

    Fig.1. Cross-section of device structures of(a)normal JLFET and(b)SGO JLFET.

    Table 1. Simulated device parameters used in this study.

    The simulation models used in Ref. [26] are implanted into our simulations. The nonlocal BTBT model is considered for the band-to-band tunneling of charge carriers between drain and channel. Due to the high doping level,the bandgap narrowing(BGN)model is also included,because the effective bandgap directly influences the tunneling current. Also, the Shockley–Read–Hall(SRH)recombination model is included due to the presence of high impurity atom concentration in the channel,and Fermi–Dirac statistics is included to calculate the intrinsic carrier concentration. For more accurate current calculations,the field-dependent and doping-dependent mobility degradation models and the drift-diffusion current transport model,are also considered.

    3. Results and discussion

    Figure 2 shows the transfer curves of normal JLFET and SGO JLFET. For normal JLFET at VDS=1 V, with the decrease of the gate voltage VGS,the drain current first decreases until it reaches its minimum value,and then starts to increase again due to GIDL effect,resulting in an off-state current with a value of 4.4×10?7A/μm. However,for the SGO JLFET,an off-state current of 1.23×10?8A/μm is achieved at VGS=0 V,VDS=1 V due to step-gate-oxide structure, decreased by 37 times compared with that in normal JLFET.Meanwhile,since the little influence of step-gate-oxide on channel in the onstate, both of the extracted threshold voltage (VTH) of SGO JLFET and normal JLFET are 0.25 V by the trans-conductance(gm)derivative method atVDS=0.1 V,[27]and the on-state current remains almost the same(6×10?4A/μm)compared with that in the normal JLFET.Therefore,the SGO JLFET exhibits a high Ion/Ioffratio(5×104)compared with the normal JLFET(1.4×103). The extracted average subthreshold swing(SS)of SGO JLFET is 84mV/decade,which is also much better than the value of 190 mV/decade in normal JLFET.

    Fig.2. Transfer characteristics of normal JLFET and SGO JLFET.

    Figure 3 shows the comparison of the energy band diagram at the surface of the SGO JLFET with that at the surface of normal JLFET at VDS= 1 V, VGS= 0 V. The Tw1and Tw2represent the tunneling width of normal JLFET and SGO JLFET respectively. It can be observed that Tw2is much larger than Tw1. An enlarged tunneling width leads the tunneling of electrons from the channel region to the drain region to decrease, resulting in a significantly reduced BTBT probability T(E) as shown in Fig.4. Figure 4 shows the surface BTBT probability at channel–drain interface between the SGO JLFET and normal JLFET when VDS=1 V and VGS=0 V.It can be seen that the largest T(E)in the SGO JLFET reduces about 5 orders of magnitude over that in the normal JLFET.

    Fig.3. Surface band diagram of normal JLFET and SGO JLFET at VDS=1 V and VGS=0 V.

    Fig.4. Surface BTBT probability plot at gate/drain interface when VDS =1 V and VGS=0 V.

    Figure 5 shows the curve of surface hole density versus VGSin the channel of SGO JLFET and normal JLFET at VGS=0 V, VDS=1 V. It can be clearly seen that the value of hole density under tunnel oxide in the SGO JLFET is much lower than that in the same region of the normal JLFET,resulting in the enlargement of tunneling width as shown in Fig.3.Meanwhile,it can be seen that the hole density under the control oxide in the SGO JLFET is also less than that in the normal JLFET,which is mainly caused by the reduction of total gate capacitance(Cgg).

    Fig.5. Surface hole concentration of normal JLFET and SGO JLFET at VGS=0 V and VDS=1 V.

    It can be seen from Eqs. (1) and (2) that a larger TToxideresults in a less value of Cgg. Therefore,the total gate capacitance of SGO JLFET is smaller than that of normal JLFET as shown in Fig.6.

    Fig.6. Total gate capacitance of normal JLFET and SGO JLFET.

    To show the influence of step-gate-oxide structure on Ioffmore clearly, the variation of the IDS–VGScurves with TToxideare simulated and shown in Fig.7. It can be seen from the figure that the off-state current decreases from 4.4×10?7A/μm to 1.2×10?8A/μm without sacrificing the on-state current as TToxideincreases from 3 nm to 6 nm. Since the increment increase of TToxidereduces the surface hole density under the tunnel oxide,the GIDL in SGO JLFET is inhibited and then Ioffdecreases as discussed above. With the increase of TToxide,the value of SS gradually decreases from 190 mV/dec to 84 mV/dec,and the Ion/Ioffratio increases from 1.3×104to 4.9×104as shown in Fig.8.

    Fig.7. Variation of IDS–VGS curves with VGS for different values of TToxide in SGO JLFET.

    Fig.8. Variation of SS and Ion/Ioff ratio with TToxide in SGO JLFET.

    Figures 9 and 10 show the influence of LToxideon IDS–VGS,SS,and Ion/Ioffratio at VDS=1 V clearly.A larger LToxideresults in a wider tunnel path at VGS=0 V,and restricts GIDL more significantly. So,when LToxideis changed from 5 nm to 10 nm, the off-state current Ioffof SGO JLFET at VGS=0 V decreases from 5×10?8A/μm to 1.23×10?8A/μm with influence on the on-state current weakening, thus, reducing the SS from 109 mV/dec to 84 mV/dec and increasing the Ion/Ioffratio from 1.2×104to 5×104as shown in Fig.10. However,A larger LToxideshortens the length of control oxide due to Lch=LToxide+LCoxide, which means the effective depletion length of channel determined by LCoxidein the off-state decreases with the LToxideincreasing,so the off-state current Ioffincreases again and obtains a value of 3.24×10?8A/μm, the SS and Ion/Ioffratio reach a value of 91 mV/dec and 1.9×104at LToxide=20 nm,respectively.

    Fig.9. Variations of ID–VGS curves for different values of LToxide in SGO JLFET.

    Fig.10. SS and Ion/Ioff ratio versus LToxide in SGO JLFET.

    To clearly show the influence of LCoxideon the performance of the SGO JLFET,the IDS–VGScurves of SGO JLFET with LCoxidechanging from 10 nm to 30 nm in steps of 10 nm are shown in Fig.11.As indicated in Fig.11,the change of the control gate length LCoxidehas little effect on the on-state current. However,since the length of depletion region under control oxide decreases with LCoxidedecreasing,the off-state current Ioffchanges from 1.23×10?8A/μm to 1.03×10?5A/μm,and the Ion/Ioffratio changes from 5×104to 59,thereby deteriorating the performance of the SGO JLFET.

    Figure 12 shows the output characteristics of the SGO JLFET with different gate voltages. The drain current IDSseparately at VGS=0.25 V, 0.5 V, 0.75 V, and 1 V first increases and then reaches saturation at high drain voltages,and IDSat VDS= 1 V increases from 1.12×10?5A/μm to 6.12×10?4A/μm as VGSincreases from 0.25 V to 1 V,showing good conduction characteristics.

    Fig.11. Transfer curves for different values of LCoxide in SGO JLFET.

    Fig.12. IDS–VDS curves in SGO JLFET for different values of VGS.

    4. Conclusions

    In this paper,a novel FD-SOI JLFET with step-gate-oxide structure is proposed to improve the I–V performance. Using the Sentaurus TCAD tool, the new step-gate-oxide architecture is demonstrated to be able to effectively broaden the tunneling width of L-BTBT in the drain–channel overlap region,thereby reastricting the GIDL effect. Thus, compared with the normal JLFETs,the proposed architecture reduces the offstate current and does not deteriorate the on-state current or VTH, resulting in a significant enhancement of SS and Ion/Ioffratio. The influence of TToxide,LToxide,and LCoxideon the performance of SGO JLFET are also examined,which could provide useful instructions for designing the device.

    猜你喜歡
    王斌
    Hydrodynamic metamaterials for flow manipulation:Functions and prospects
    習(xí)作轉(zhuǎn)化創(chuàng)作
    質(zhì)子泵抑制劑對反流性咽喉炎的療效研究
    王斌陶藝設(shè)計作品選
    王斌陶藝設(shè)計作品選
    公租房性猝死事件:貪個租金倒賠45萬
    Nutrient-enhanced n-alkanes biodegradation and succession of bacterial communities*
    Microbial ecological associations in the surface sediments of Bohai Strait*
    高考化學(xué)計算型習(xí)題常見解法例析
    不給禮金不準(zhǔn)結(jié)婚,女婿偽造存折弄巧成拙被判刑
    欧美日韩在线观看h| 亚洲国产精品专区欧美| 最近最新中文字幕免费大全7| 97超视频在线观看视频| 一级a做视频免费观看| 亚洲内射少妇av| ponron亚洲| 91午夜精品亚洲一区二区三区| 久久这里只有精品中国| 高清av免费在线| 男女视频在线观看网站免费| 天堂俺去俺来也www色官网 | 亚洲内射少妇av| 啦啦啦中文免费视频观看日本| 亚洲国产最新在线播放| 亚洲国产成人一精品久久久| 精品久久久噜噜| 精品久久久久久久人妻蜜臀av| 特级一级黄色大片| 欧美高清性xxxxhd video| 青春草国产在线视频| 日日啪夜夜爽| 国产精品.久久久| 日韩一本色道免费dvd| 日本wwww免费看| 男女边吃奶边做爰视频| 国产在视频线精品| 中文字幕制服av| 啦啦啦韩国在线观看视频| 久久久久久久久久久免费av| 中文欧美无线码| 亚洲国产精品sss在线观看| 女人久久www免费人成看片| 亚洲av中文av极速乱| 国产精品一及| av免费在线看不卡| 日韩av在线大香蕉| 在线观看免费高清a一片| 简卡轻食公司| 丝袜喷水一区| 大陆偷拍与自拍| 国产三级在线视频| 一级毛片电影观看| 欧美成人一区二区免费高清观看| 男女那种视频在线观看| 精品国产露脸久久av麻豆 | 亚洲欧美日韩卡通动漫| 亚洲aⅴ乱码一区二区在线播放| 最近视频中文字幕2019在线8| 久久久久久久午夜电影| 草草在线视频免费看| 大香蕉久久网| 国产伦在线观看视频一区| 欧美激情在线99| 亚洲内射少妇av| 99久久中文字幕三级久久日本| 中文字幕av成人在线电影| 精品人妻熟女av久视频| 久久人人爽人人爽人人片va| 精品久久久久久电影网| 亚洲,欧美,日韩| 观看免费一级毛片| 男人狂女人下面高潮的视频| 国产成人aa在线观看| 国产亚洲精品久久久com| 亚洲va在线va天堂va国产| 日日摸夜夜添夜夜爱| 日本av手机在线免费观看| 日本爱情动作片www.在线观看| videossex国产| 高清毛片免费看| 日韩国内少妇激情av| 国产三级在线视频| av卡一久久| a级毛色黄片| 色视频www国产| 国产精品麻豆人妻色哟哟久久 | 国产极品天堂在线| 97在线视频观看| 插阴视频在线观看视频| 丝瓜视频免费看黄片| 中文乱码字字幕精品一区二区三区 | 美女xxoo啪啪120秒动态图| 亚洲av免费高清在线观看| av线在线观看网站| 三级经典国产精品| 久久久久精品久久久久真实原创| 亚洲欧美成人综合另类久久久| 男女边吃奶边做爰视频| 一级片'在线观看视频| 午夜福利在线观看吧| 欧美成人精品欧美一级黄| 国产又色又爽无遮挡免| 国内少妇人妻偷人精品xxx网站| 色综合亚洲欧美另类图片| 色综合亚洲欧美另类图片| av在线播放精品| 少妇人妻精品综合一区二区| 久久久精品免费免费高清| 你懂的网址亚洲精品在线观看| 精品久久久久久久久亚洲| or卡值多少钱| 天堂俺去俺来也www色官网 | 午夜福利在线在线| 国产一区二区亚洲精品在线观看| 色吧在线观看| 久久久色成人| 午夜精品国产一区二区电影 | 搡老妇女老女人老熟妇| 国产中年淑女户外野战色| 国产免费又黄又爽又色| 三级国产精品欧美在线观看| 国产欧美另类精品又又久久亚洲欧美| 亚州av有码| 精品国产三级普通话版| 久久韩国三级中文字幕| 狠狠精品人妻久久久久久综合| 婷婷色av中文字幕| 久久久久久久久久成人| 日日啪夜夜撸| 青春草亚洲视频在线观看| 久久久久精品性色| 日韩在线高清观看一区二区三区| 午夜福利在线在线| 搡老妇女老女人老熟妇| 嘟嘟电影网在线观看| 18+在线观看网站| 亚洲av日韩在线播放| xxx大片免费视频| 在线 av 中文字幕| 午夜精品一区二区三区免费看| 日韩成人伦理影院| 日本色播在线视频| av一本久久久久| 国产亚洲精品久久久com| 亚洲天堂国产精品一区在线| 尾随美女入室| 国产黄色免费在线视频| 舔av片在线| 一级毛片我不卡| 日本免费a在线| 在现免费观看毛片| 日本一本二区三区精品| av天堂中文字幕网| 亚洲综合色惰| 最后的刺客免费高清国语| 亚洲精品国产av蜜桃| 国产成人精品久久久久久| 蜜桃亚洲精品一区二区三区| 日日摸夜夜添夜夜爱| 国产高清国产精品国产三级 | 亚洲成人av在线免费| 亚洲一区高清亚洲精品| 亚洲国产成人一精品久久久| 熟妇人妻不卡中文字幕| 亚洲av中文字字幕乱码综合| 成年女人在线观看亚洲视频 | videos熟女内射| 男插女下体视频免费在线播放| 日韩制服骚丝袜av| 97超碰精品成人国产| 又爽又黄a免费视频| 国产亚洲午夜精品一区二区久久 | 日韩 亚洲 欧美在线| 国产亚洲最大av| 国内少妇人妻偷人精品xxx网站| 最近最新中文字幕大全电影3| 51国产日韩欧美| 亚洲国产精品成人综合色| 免费观看av网站的网址| 国产淫语在线视频| 久久久久久久久久久丰满| 亚洲人与动物交配视频| 看非洲黑人一级黄片| 亚洲第一区二区三区不卡| 日韩,欧美,国产一区二区三区| 欧美日韩精品成人综合77777| 国产免费福利视频在线观看| 大又大粗又爽又黄少妇毛片口| 精品久久久久久成人av| 免费观看性生交大片5| 噜噜噜噜噜久久久久久91| 日韩强制内射视频| 狂野欧美激情性xxxx在线观看| 久久99蜜桃精品久久| 国产伦在线观看视频一区| 亚洲av福利一区| 九九爱精品视频在线观看| 国产淫片久久久久久久久| 美女xxoo啪啪120秒动态图| 欧美另类一区| 国产av不卡久久| 99久久精品国产国产毛片| 久久热精品热| 欧美性猛交╳xxx乱大交人| 亚洲精品成人av观看孕妇| 亚洲丝袜综合中文字幕| 日产精品乱码卡一卡2卡三| 久久久久久久午夜电影| 久热久热在线精品观看| 99视频精品全部免费 在线| av播播在线观看一区| 乱人视频在线观看| 免费黄网站久久成人精品| 寂寞人妻少妇视频99o| 国产精品一区二区三区四区久久| 99久久精品国产国产毛片| kizo精华| 欧美日韩精品成人综合77777| 成人无遮挡网站| 99热这里只有是精品50| 国产av在哪里看| 18禁在线无遮挡免费观看视频| 日本三级黄在线观看| 国产成人精品福利久久| 男女下面进入的视频免费午夜| 国模一区二区三区四区视频| 国产午夜精品论理片| 日韩中字成人| 亚洲欧美中文字幕日韩二区| 亚洲成色77777| 七月丁香在线播放| 国产精品一二三区在线看| 欧美人与善性xxx| 久久久久精品久久久久真实原创| 亚洲最大成人手机在线| 91狼人影院| 丰满人妻一区二区三区视频av| 亚洲国产精品成人久久小说| 欧美日韩综合久久久久久| 亚洲av成人av| 亚洲人与动物交配视频| h日本视频在线播放| 亚洲熟妇中文字幕五十中出| 国产v大片淫在线免费观看| 夜夜看夜夜爽夜夜摸| 一级二级三级毛片免费看| 成人亚洲精品av一区二区| 国产av码专区亚洲av| 色哟哟·www| 国产69精品久久久久777片| 在线天堂最新版资源| 麻豆国产97在线/欧美| 亚洲精品国产av蜜桃| 插逼视频在线观看| 一级毛片 在线播放| 99热6这里只有精品| 看黄色毛片网站| 欧美日韩精品成人综合77777| 亚洲综合精品二区| 国产精品一区二区三区四区免费观看| 亚洲综合色惰| 超碰97精品在线观看| 国产伦精品一区二区三区四那| 国产精品一区二区性色av| 淫秽高清视频在线观看| 精品亚洲乱码少妇综合久久| 久久国产乱子免费精品| 简卡轻食公司| 久久久久久久久久人人人人人人| 日本av手机在线免费观看| 成人欧美大片| 国产一区亚洲一区在线观看| 特大巨黑吊av在线直播| 亚洲激情五月婷婷啪啪| 午夜福利在线观看吧| 欧美激情国产日韩精品一区| 国产国拍精品亚洲av在线观看| 秋霞在线观看毛片| 成人亚洲精品一区在线观看 | 我的女老师完整版在线观看| 亚洲欧美一区二区三区国产| 欧美不卡视频在线免费观看| 成人特级av手机在线观看| 秋霞在线观看毛片| 美女脱内裤让男人舔精品视频| 天堂√8在线中文| 日本一二三区视频观看| 99久久精品一区二区三区| 亚洲精品,欧美精品| 国产黄色小视频在线观看| 免费在线观看成人毛片| 国产男女超爽视频在线观看| 国产视频首页在线观看| 亚洲美女搞黄在线观看| av在线蜜桃| 综合色丁香网| 亚洲久久久久久中文字幕| 日日啪夜夜撸| 免费观看的影片在线观看| 特级一级黄色大片| 日韩av免费高清视频| 国产人妻一区二区三区在| 特级一级黄色大片| 床上黄色一级片| 久久久久久久久久久丰满| 日韩av不卡免费在线播放| 亚洲高清免费不卡视频| 国产伦理片在线播放av一区| 国产黄a三级三级三级人| 女人被狂操c到高潮| 亚洲av日韩在线播放| 综合色丁香网| 小蜜桃在线观看免费完整版高清| 亚洲av.av天堂| 成年免费大片在线观看| 纵有疾风起免费观看全集完整版 | 亚洲国产成人一精品久久久| 纵有疾风起免费观看全集完整版 | 国产日韩欧美在线精品| 神马国产精品三级电影在线观看| 成人无遮挡网站| 亚洲图色成人| 国产不卡一卡二| 在线 av 中文字幕| 欧美区成人在线视频| 成人漫画全彩无遮挡| 国产色婷婷99| 国内揄拍国产精品人妻在线| 免费黄色在线免费观看| 国产色婷婷99| 精品99又大又爽又粗少妇毛片| 久久国产乱子免费精品| 永久网站在线| 日本黄大片高清| 欧美日韩一区二区视频在线观看视频在线 | 久久午夜福利片| 人妻少妇偷人精品九色| 嘟嘟电影网在线观看| 亚洲在线观看片| 日日摸夜夜添夜夜添av毛片| 赤兔流量卡办理| 特级一级黄色大片| 国产伦理片在线播放av一区| 久久久久国产网址| 三级国产精品欧美在线观看| 国产精品无大码| 中文欧美无线码| 日本wwww免费看| 97在线视频观看| 黑人高潮一二区| av又黄又爽大尺度在线免费看| 日韩欧美精品v在线| ponron亚洲| 亚洲国产高清在线一区二区三| 午夜福利在线观看免费完整高清在| 国产精品一区二区三区四区免费观看| 久久久久久久久中文| 一个人看视频在线观看www免费| 干丝袜人妻中文字幕| 国模一区二区三区四区视频| 女人十人毛片免费观看3o分钟| 啦啦啦中文免费视频观看日本| 亚洲婷婷狠狠爱综合网| 免费观看的影片在线观看| 国语对白做爰xxxⅹ性视频网站| 国产在视频线精品| 极品教师在线视频| 久久精品国产鲁丝片午夜精品| 国产高清三级在线| 日韩欧美一区视频在线观看 | 我的女老师完整版在线观看| 免费黄网站久久成人精品| 婷婷色麻豆天堂久久| 五月天丁香电影| 夫妻性生交免费视频一级片| 最近视频中文字幕2019在线8| 国产一区有黄有色的免费视频 | 男人和女人高潮做爰伦理| 久久精品国产亚洲av涩爱| 亚洲最大成人av| 亚洲在线观看片| 国产精品99久久久久久久久| 国语对白做爰xxxⅹ性视频网站| 一区二区三区乱码不卡18| 国产亚洲午夜精品一区二区久久 | 日韩av在线大香蕉| 啦啦啦中文免费视频观看日本| 日本av手机在线免费观看| 18禁在线无遮挡免费观看视频| 日本欧美国产在线视频| 久久久久精品性色| 18禁动态无遮挡网站| 精品国内亚洲2022精品成人| 欧美人与善性xxx| 天堂中文最新版在线下载 | 51国产日韩欧美| 中文资源天堂在线| 真实男女啪啪啪动态图| 免费高清在线观看视频在线观看| 国产成人freesex在线| 1000部很黄的大片| 中国国产av一级| 99久国产av精品| 国产免费一级a男人的天堂| 乱人视频在线观看| 午夜精品国产一区二区电影 | 亚洲欧美一区二区三区黑人 | 日韩欧美一区视频在线观看 | 日韩欧美精品免费久久| 中国美白少妇内射xxxbb| 一级毛片久久久久久久久女| 91精品一卡2卡3卡4卡| 国产综合精华液| 日韩在线高清观看一区二区三区| 欧美日韩视频高清一区二区三区二| 欧美变态另类bdsm刘玥| 视频中文字幕在线观看| 国产午夜精品论理片| 91在线精品国自产拍蜜月| 亚洲色图av天堂| 97热精品久久久久久| 你懂的网址亚洲精品在线观看| 国产亚洲av嫩草精品影院| 国产一级毛片七仙女欲春2| 成人av在线播放网站| 亚洲精品亚洲一区二区| 一级av片app| 久久久久精品久久久久真实原创| 最近最新中文字幕大全电影3| 爱豆传媒免费全集在线观看| 波多野结衣巨乳人妻| 国产高清国产精品国产三级 | 亚洲三级黄色毛片| 我要看日韩黄色一级片| 国产精品一区二区三区四区免费观看| 一本久久精品| 91久久精品电影网| 亚洲一区高清亚洲精品| 成人国产麻豆网| 久热久热在线精品观看| 神马国产精品三级电影在线观看| 亚洲精品国产成人久久av| 91在线精品国自产拍蜜月| 中文资源天堂在线| 3wmmmm亚洲av在线观看| 少妇裸体淫交视频免费看高清| 国产免费又黄又爽又色| 国产一区亚洲一区在线观看| 狂野欧美白嫩少妇大欣赏| 日本-黄色视频高清免费观看| 卡戴珊不雅视频在线播放| 午夜免费男女啪啪视频观看| 久久久久久久国产电影| 日日啪夜夜爽| 日日啪夜夜撸| 观看美女的网站| 天堂俺去俺来也www色官网 | 91狼人影院| 亚洲伊人久久精品综合| 三级国产精品片| 欧美区成人在线视频| 淫秽高清视频在线观看| 久久久久久久久久久丰满| 亚洲激情五月婷婷啪啪| 日日摸夜夜添夜夜爱| 国产又色又爽无遮挡免| 亚洲国产精品sss在线观看| 午夜福利视频1000在线观看| 国产欧美日韩精品一区二区| 欧美高清成人免费视频www| 国产亚洲5aaaaa淫片| 久久综合国产亚洲精品| 久久精品久久久久久久性| 欧美三级亚洲精品| 久久久久久久午夜电影| 成人鲁丝片一二三区免费| av福利片在线观看| 欧美另类一区| 精品亚洲乱码少妇综合久久| 中文字幕av成人在线电影| 啦啦啦中文免费视频观看日本| 可以在线观看毛片的网站| 26uuu在线亚洲综合色| 久久久久网色| 波野结衣二区三区在线| 综合色av麻豆| 国产精品伦人一区二区| 久久热精品热| 男女视频在线观看网站免费| 成人午夜精彩视频在线观看| 91在线精品国自产拍蜜月| 久久久久久久久久久免费av| 亚洲国产精品成人久久小说| 天天躁夜夜躁狠狠久久av| 国产精品久久久久久久久免| 嫩草影院入口| 大话2 男鬼变身卡| 女人被狂操c到高潮| 亚洲av男天堂| 亚洲久久久久久中文字幕| 久久久午夜欧美精品| 久99久视频精品免费| 久久久久久久久久人人人人人人| 国产亚洲最大av| 乱码一卡2卡4卡精品| 日韩伦理黄色片| 女人被狂操c到高潮| 边亲边吃奶的免费视频| 麻豆国产97在线/欧美| 成年人午夜在线观看视频 | 看黄色毛片网站| 99久久中文字幕三级久久日本| 麻豆精品久久久久久蜜桃| 亚洲电影在线观看av| 好男人视频免费观看在线| 国产精品不卡视频一区二区| 亚州av有码| 最近最新中文字幕大全电影3| 2022亚洲国产成人精品| 亚洲精品影视一区二区三区av| 中国美白少妇内射xxxbb| 久久久久精品久久久久真实原创| 成人av在线播放网站| 国产精品1区2区在线观看.| 日韩欧美三级三区| 狂野欧美白嫩少妇大欣赏| 午夜福利高清视频| 97热精品久久久久久| 看免费成人av毛片| 在线观看美女被高潮喷水网站| 久久精品久久精品一区二区三区| 乱系列少妇在线播放| 大香蕉久久网| 美女国产视频在线观看| 少妇人妻精品综合一区二区| 九草在线视频观看| 卡戴珊不雅视频在线播放| 大香蕉久久网| 超碰av人人做人人爽久久| 欧美日韩亚洲高清精品| 亚洲精品久久久久久婷婷小说| 免费观看无遮挡的男女| 国产一区有黄有色的免费视频 | h日本视频在线播放| 校园人妻丝袜中文字幕| 亚洲欧美日韩东京热| 久久精品夜夜夜夜夜久久蜜豆| 亚洲成人久久爱视频| 91午夜精品亚洲一区二区三区| 禁无遮挡网站| 欧美日韩一区二区视频在线观看视频在线 | 色视频www国产| 1000部很黄的大片| 最后的刺客免费高清国语| 亚洲精华国产精华液的使用体验| 国产精品精品国产色婷婷| 80岁老熟妇乱子伦牲交| 九九久久精品国产亚洲av麻豆| 亚洲精品中文字幕在线视频 | 成人综合一区亚洲| 只有这里有精品99| 亚洲国产色片| 日本-黄色视频高清免费观看| 最近手机中文字幕大全| www.av在线官网国产| 亚洲精品色激情综合| 国产探花在线观看一区二区| 亚洲精品乱久久久久久| 国产精品国产三级国产专区5o| 日韩av不卡免费在线播放| 熟女人妻精品中文字幕| 成人毛片a级毛片在线播放| 成年版毛片免费区| 亚洲成人中文字幕在线播放| 亚洲精品中文字幕在线视频 | 一级片'在线观看视频| 少妇熟女欧美另类| 久久99精品国语久久久| 非洲黑人性xxxx精品又粗又长| 成人亚洲欧美一区二区av| 亚洲四区av| 亚洲欧美一区二区三区黑人 | 亚洲自拍偷在线| 国产精品久久久久久精品电影小说 | 欧美激情国产日韩精品一区| 淫秽高清视频在线观看| 亚洲天堂国产精品一区在线| 日本wwww免费看| 国产一级毛片在线| 免费观看av网站的网址| 大片免费播放器 马上看| 人人妻人人澡人人爽人人夜夜 | 国产淫片久久久久久久久| 国产精品综合久久久久久久免费| 国产亚洲av嫩草精品影院| 国产爱豆传媒在线观看| 最近手机中文字幕大全| 成人一区二区视频在线观看| 亚洲欧美精品自产自拍| 国产在视频线精品| 欧美最新免费一区二区三区| 综合色丁香网| 少妇高潮的动态图| 一区二区三区四区激情视频| 欧美日本视频| 69人妻影院| 黄色配什么色好看| 国模一区二区三区四区视频| 在线a可以看的网站| 少妇猛男粗大的猛烈进出视频 | 一级av片app| 精品久久久久久电影网| 亚洲精品一区蜜桃| 国产亚洲91精品色在线| 大又大粗又爽又黄少妇毛片口| 亚洲一级一片aⅴ在线观看| 午夜精品一区二区三区免费看| 天堂√8在线中文| 亚洲无线观看免费| 国产精品精品国产色婷婷| 国产午夜精品论理片| 国产精品久久久久久av不卡| .国产精品久久| 五月天丁香电影|