朱石超+趙麗霞+楊華
中圖分類號(hào):TN929.1 ? ?文獻(xiàn)標(biāo)志碼:A ? 文章編號(hào):1009-6868 (2014) 06-0029-004
摘要:認(rèn)為研究發(fā)光二極管(LED)器件調(diào)制特性以及在高速調(diào)制狀態(tài)下的發(fā)光特性是提升新型可見光通信系統(tǒng)性能的關(guān)鍵問題之一,LED器件調(diào)制特性的提升可以顯著拓展可見光通信系統(tǒng)的應(yīng)用范圍?;贚ED器件的調(diào)頻特性,通過分析發(fā)光器件和封裝的結(jié)構(gòu)及其他關(guān)鍵光電性能,提出建議:通過降低RC時(shí)間以及載流子自發(fā)輻射壽命,有效改善LED器件的響應(yīng)速率,提高LED的調(diào)制帶寬。
關(guān)鍵詞:可見光通信;發(fā)光二極管;響應(yīng)頻率;調(diào)制帶寬;照明
Abstract:?The electronic and optical frequency characteristics of LEDs are key issues in a VLC system. After investigating the effect of light source and its package on the performance of VLC system, we make the following proposal: the RC time and carrier spontaneous recombination time of the LEDs need to be decreased in order to improve the modulation bandwidth of LEDs. When the LED modulation characteristics are improved, the VLC system can be more widely applied.
Keywords:?visible light communication; light emission diodes; response frequency; modulation bandwidth; illumination
1 LED器件的調(diào)制帶寬
及其測試
帶寬一般指信號(hào)所占據(jù)的頻帶寬度。當(dāng)描述信道時(shí),帶寬指能夠有效通過該信道信號(hào)的最大頻帶寬度。發(fā)光二極管(LED)的調(diào)制帶寬則是器件在加載調(diào)制信號(hào)時(shí),能承載信號(hào)最大的頻帶寬度,一般定義為LED輸出的交流光功率下降到某一低頻參考頻率值得一半時(shí)(如-3 dB)的頻率定為LED的調(diào)制帶寬。LED的調(diào)制帶寬是可見光通信系統(tǒng)信道容量和傳輸速率的決定性因素,受到器件實(shí)際的調(diào)制深度、伏安特性等因素的多方面影響。
LED器件調(diào)制帶寬的測試,通常都是對直流工作下的器件加載模擬信號(hào)(如正弦信號(hào)),測量光功率信號(hào)隨頻率變化的曲線,來確定帶寬。
圖1給出了一種器件調(diào)制特性測試系統(tǒng)[1-3]。它主要包括信號(hào)發(fā)射端和接收端。在發(fā)射端,信號(hào)發(fā)生器發(fā)出的信號(hào)被功率放大器放大,以提高其調(diào)制深度;隨后,信號(hào)加載到驅(qū)動(dòng)LED的直流偏置上,使得LED發(fā)出調(diào)制光信號(hào);在接收端,光電探測器將光信號(hào)轉(zhuǎn)換為電信號(hào),經(jīng)過濾波放大,輸出到示波器上。
圖2是另一種器件調(diào)制特性測試系統(tǒng)[4-5]。系統(tǒng)的核心是網(wǎng)絡(luò)分析儀,它將信號(hào)產(chǎn)生、探測以及處理的功能集成在一起,能夠?qū)崿F(xiàn)更高頻率的測試。測量LED調(diào)制帶寬,主要關(guān)注網(wǎng)絡(luò)分析儀的S21參數(shù),即網(wǎng)絡(luò)分析儀的端口2的輸入功率/端口1的輸出功率。
2 影響因素及改善方法
一般來說,影響LED調(diào)制特性的因素主要取決于以下兩個(gè)方面[6]:RC時(shí)間和載流子自發(fā)輻射壽命。LED的有源區(qū)是多量子阱結(jié)構(gòu),具有電荷限制作用,在響應(yīng)過程中的上升下降時(shí)間稱為RC時(shí)間,主要受到結(jié)電容影響,對信號(hào)具有延遲作用;而器件有源區(qū)內(nèi)載流子自發(fā)輻射壽命直接影響載流子從復(fù)合到光子逃逸出器件的時(shí)間。
2.1 降低RC時(shí)間
圖3所示為LED的小信號(hào)等效電路[7]。這個(gè)小信號(hào)等效電路,實(shí)際上和閾值電壓下的激光器的等效電路類似。因?yàn)樵陂撝惦妷合拢す馄髌骷ぷ髟谧园l(fā)輻射狀態(tài),受激發(fā)射過程還沒有開始,所以LED也使用該等效電路[8-11]。
其中,C是結(jié)電容,RD是結(jié)電阻,RS是等效串聯(lián)電阻,L為引線等引起的寄生電感。研究人員通過實(shí)驗(yàn)測量及理論擬合,可以得到這些對應(yīng)的關(guān)鍵參數(shù)[7-8]。這里得到的電容和幾何電容是一個(gè)量級(jí)的,電阻也和幾何電阻相近。因此通過器件的尺寸設(shè)計(jì)可以有效調(diào)整等效電路參數(shù)進(jìn)而提高器件帶寬。
通過這種器件的尺寸設(shè)計(jì)來降低RC時(shí)間,從而改善LED調(diào)制帶寬,是較為直觀的一種方式。通過設(shè)計(jì)一組不同尺寸(結(jié)面積、p-GaN與結(jié)接觸面積不同)的LED器件,研究尺寸對LED帶寬的影響[4]。有源區(qū)面積越大的器件,在相同電流密度下,具有較小的調(diào)制帶寬。其原因主要是因?yàn)榈刃ЫY(jié)電容更大,而且電容增大對帶寬的影響比電阻減小的效果更加顯著。這個(gè)結(jié)果和臺(tái)灣成功大學(xué)的J.-W. Shi等人[6]的結(jié)果一致。圖4給出實(shí)驗(yàn)器件A與B在不同驅(qū)動(dòng)電流下的頻率響應(yīng)曲線。A器件p-GaN與結(jié)接觸面積更大。
圖4還反映了不同電流對LED帶寬的影響,大電流下,載流子濃度增加,導(dǎo)致多量子阱內(nèi)復(fù)合增強(qiáng),載流子輻射復(fù)合壽命減小。
臺(tái)灣清華大學(xué)的Chien-Lan Liao等人[12]利用摻鎵(Ga)的氧化鋅(ZnO)薄膜GZO,有效地降低了結(jié)電容。圖5顯示具有電流限制層的藍(lán)光LED結(jié)構(gòu)示意圖。由于將p型的GaN層刻出臺(tái)面,在p型上做電極,能減小有效電容。而且電極采用環(huán)形結(jié)構(gòu),利用橫向電阻大的GZO薄膜,實(shí)現(xiàn)對電流限制作用,使得電流主要在垂直方向傳輸,即GZO實(shí)現(xiàn)了與氧化銦錫(ITO)相反的功能,抑制了電流的擴(kuò)展。因此,實(shí)際的結(jié)電容將會(huì)變小,從而實(shí)現(xiàn)LED調(diào)制帶寬的提高。通過這種環(huán)形電極設(shè)計(jì),該器件的3 dB帶寬達(dá)到225 MHz。
臺(tái)灣中央大學(xué)的許晉瑋等人[13]通過串聯(lián)的方式也有效提高了LED調(diào)制速率,其出發(fā)點(diǎn)也是基于對RC時(shí)間的優(yōu)化。假如N個(gè)相同的LED串聯(lián),電阻值將線性增加R總=N·R,而電容值線性降低C總=C/N。這樣雖然RC時(shí)間沒有發(fā)生變化。但是,一般器件都要外接負(fù)載,那么實(shí)際RC就是(N·R+R0)·C/N,因此,就小于單個(gè)相同面積LED的RC(RC+N·R0C),從而可以有效提高調(diào)制帶寬。
2.2 降低載流子自發(fā)輻射壽命
可見光(VLC)通信系統(tǒng)一般都工作在大電流區(qū)域范圍內(nèi),因此還需要研究不同電流下頻率響應(yīng)。圖6是不同電流下,器件頻率響應(yīng)曲線。外加驅(qū)動(dòng)電流越大,電光轉(zhuǎn)換(E-O)的3 dB帶寬也會(huì)越大[12-15]。從圖6可以看出,120 mA下調(diào)制頻率大約是40 mA下的2倍。主要因?yàn)榧ぷ訌?fù)合幾率正比于注入載流子密度[6]。大電流下,注入的載流子濃度增加,因而激子復(fù)合幾率增加,輻射復(fù)合載流子壽命降低,E-O快速響應(yīng)。
影響載流子自發(fā)輻射壽命的因素很多,一般來說,外部因素主要是來源于注入載流子的濃度;而內(nèi)部因素主要是由于器件自身的結(jié)構(gòu)以及其他復(fù)合通道等。
伊利諾伊大學(xué)香檳分校的M. Feng等人[16],通過一種類似異質(zhì)結(jié)雙極發(fā)光晶體管(HBLET)的LED將調(diào)制速率提高了一個(gè)量級(jí),達(dá)到吉赫茲量級(jí)。HBLET是一種3端口發(fā)光器件(一個(gè)電輸入端、一個(gè)電輸出端、一個(gè)光輸出端),器件中量子阱有源區(qū)合并到基區(qū),提高了電學(xué)和光學(xué)的性質(zhì),而高速LED結(jié)構(gòu)和HBLET相似。在60 mA驅(qū)動(dòng)電流下,器件的E-O調(diào)制頻率高達(dá)7 GHz,但是功率很小,大約僅為13.8 μW。圖7為器件(n-p-n結(jié)構(gòu))的結(jié)構(gòu)示意圖,可以看到發(fā)射極接負(fù)電壓,基極和集電極(這個(gè)也叫漏極Drain)接正極,這樣發(fā)射結(jié)正偏,集電結(jié)反偏。因?yàn)榛鶚O和漏極同一電位,基極-漏極邊界沒有電荷分布積累,交流驅(qū)動(dòng)下,在基區(qū)建立動(dòng)態(tài)的發(fā)射極與漏極的電荷分布。因此,基區(qū)的過剩載流子自發(fā)輻射復(fù)合的壽命就大于從發(fā)射極到漏極的傳輸時(shí)間,使得載流子還沒有來得及復(fù)合,就被內(nèi)建反向電場掃到漏極,僅保留快速的載流子復(fù)合發(fā)光,從而提高了調(diào)制速度。
圖8給出了E-O的頻率測試結(jié)果。調(diào)制頻率非常高,并且隨著電流的增加,調(diào)制速度提高,在60 mA時(shí)達(dá)到7 GHz。這個(gè)結(jié)果和塑料光纖發(fā)光二極管(POF-LED)結(jié)果相同。但是存在一個(gè)很大的問題是,器件的功率非常小,3 V的正向偏壓下,驅(qū)動(dòng)電流達(dá)到60 mA,所對應(yīng)的光功率只有15 μW,完全不適用于照明LED,不過該工作也提供了一種改進(jìn)大功率LED帶寬的思路。
材料中的載流子復(fù)合機(jī)制包括輻射復(fù)合、非輻射復(fù)合。表面等離激元耦合是除了前面兩者外第3種能量傳遞通道也能夠影響輻射復(fù)合載流子壽命,提高LED調(diào)制帶寬。
加州理工學(xué)院的Koichi Okamoto等人[17]首次在LED上利用表面等離激元,得到出光增加的效果。文獻(xiàn)[18]給載流子復(fù)合發(fā)射光子提供了一條新的技術(shù)途徑。如圖9所示,載流子復(fù)合的能量轉(zhuǎn)換有多個(gè)途徑,包括輻射復(fù)合、非輻射復(fù)合以及量子阱-表面等離激元(QW-SP)耦合。非輻射復(fù)合不能產(chǎn)生光子,能量最終以熱的形式耗散掉了;輻射復(fù)合能夠產(chǎn)生光子,產(chǎn)生的光子有一部分能夠溢出器件,逃逸出的光子數(shù)能通過外量子效率反映。圖9中黑色箭頭表示QW-SP耦合的可能形式。載流子復(fù)合后能量沒有直接轉(zhuǎn)換為光子,而是耦合到距離比較近(30 nm左右)的表面等離激元中(SP),然后再以輻射的形式將能量放出到LED外面。這個(gè)過程的速度遠(yuǎn)比輻射復(fù)合能量轉(zhuǎn)換速度快。490 nm波長下,差異明顯減小,這個(gè)是由于QW-SP耦合波長在藍(lán)光,因此長波長的位置,能量耦合減弱,差異減小。
通過Al組分調(diào)控[5]以及delta摻雜技術(shù)[19],同樣可以實(shí)現(xiàn)LED器件帶寬的提高。Al組分調(diào)控,原理主要是改變能帶結(jié)構(gòu),實(shí)現(xiàn)空穴的有效注入,調(diào)控極化電場,從而實(shí)現(xiàn)調(diào)制帶寬的提高,300 mA工作電流下,帶寬從23.5 MHz提高到25.5 MHz;delta摻雜技術(shù),實(shí)現(xiàn)了載流子的大量注入,從而降低了載流子壽命,實(shí)現(xiàn)相同電流密度下,調(diào)制帶寬的提高。圖10給出了delta摻雜后器件的眼圖。
3 結(jié)束語
隨著光效的提高和成本的降低,LED已經(jīng)被廣泛地應(yīng)用于信息顯示和各種功能性照明。可見光通信利用了LED相比傳統(tǒng)光源高光效和高響應(yīng)速率的特點(diǎn),在照明的同時(shí),實(shí)現(xiàn)無線數(shù)據(jù)傳輸功能。常規(guī)的白光LED器件調(diào)制帶寬通常只有3~5 MHz,制約了可見光通信系統(tǒng)帶寬的進(jìn)一步提高,通過適當(dāng)?shù)恼{(diào)整材料和芯片的結(jié)構(gòu),優(yōu)化器件工藝參數(shù),引入表面等離激元等新的輻射復(fù)合機(jī)制等方式能夠有效的提高LED器件調(diào)制帶寬,進(jìn)一步拓展可見光通信系統(tǒng)的應(yīng)用范圍。
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[16] WALTER G, WU C H, THEN H W, FENG M, HOLONYAK N. Tilted-charge high speed (7 GHz) light emitting diode [J].Applied Physics Letters, 2009,94(23): 231125- 231126.
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[19] ZHU S. The effect of delta-doping on Si-doped Al rich n-AlGaN on AlN template grown by MOCVD [J].Physica status solidi, 2014,11(3):466-468.